Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle

We use the superposition method to model electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunneling field-effect transistor (TFET). The is formed from Ge/Si material in source/channel, respectively. modeling accomplished by considering space-charge regions at source–channel and drain–channel junctions channel region. surface potential region obtained applying principle derived source/drain solving two-dimensional (2D) or one-dimensional (1D) Poisson’s equation, Furthermore, electric field drain current are modeled using Kane model, results confirmed ATLAS technology computer-aided design (TCAD) simulations.